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SI8401DB-T1-E3
RoHS 
RoHS compliant
RoHS compliantPackage 4-XFBGA, CSPBGA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 20V 3.6A 2X2 4-MFP
PDF
Buying Options
Total Price: USD $0.66
Unit Price: USD $0.66405
≥1 USD $0.66405
≥10 USD $0.5453
≥100 USD $0.5282
≥500 USD $0.5111
≥1000 USD $0.494
Inventory: 4663
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 33 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-XFBGA, CSPBGA
Number of Pins 4
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Termination SMD/SMT
ECCN Code EAR99
Resistance 65mOhm
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.47W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.77W
Turn On Delay Time 17 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 65m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 3.6A Ta
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Rise Time 28 ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 28 ns
Turn-Off Delay Time 88 ns
Continuous Drain Current (ID) -3.6A
Threshold Voltage -4.5V
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
Nominal Vgs -4.5 V
Dimensions
Height 360μm
Length 1.6mm
Width 1.6mm
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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