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2SK2103T100

ROHM Semiconductor
RoHS
RoHS RoHS compliant
Package TO-243AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 2A SOT-89
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Buying Options
Total Price: USD $12.02
Unit Price: USD $12.0156
≥1 USD $12.0156
≥10 USD $9.8591
≥100 USD $9.5513
≥500 USD $9.24255
≥1000 USD $8.93475
Inventory: 2620
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 7 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 1998
JESD-609 Code e2
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN COPPER
HTS Code 8541.21.00.95
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating 2A
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 3
Number of Elements 1
Power Dissipation-Max 500mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 400m Ω @ 1A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 230pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2A Ta
Rise Time 25 ns
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±20V
Fall Time (Typ) 60 ns
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 2A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 2A
Drain-source On Resistance-Max 0.6Ohm
Drain to Source Breakdown Voltage 30V

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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