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IPP040N06NAKSA1
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 20A TO220-3
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Buying Options
Total Price: USD $1.08
Unit Price: USD $1.083209
≥1 USD $1.083209
≥10 USD $1.021895
≥100 USD $0.964047
≥500 USD $0.90948
≥1000 USD $0.858003
Inventory: 8916
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 13 Weeks
Physical
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Compliance
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series OptiMOS?
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Power Dissipation-Max 3W Ta 107W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 107W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 2.8V @ 50μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2700pF @ 30V
Current - Continuous Drain (Id) @ 25°C 20A Ta 80A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Rise Time 16 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 80A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Drain Current-Max (Abs) (ID) 20A
Drain-source On Resistance-Max 0.004Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 320A
Avalanche Energy Rating (Eas) 70 mJ
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