Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 195.3W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 12.4 ns
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 150m Ω @ 9.3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 900μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2340pF @ 100V
Current - Continuous Drain (Id) @ 25°C 22.4A Tc
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 52.8 ns
Continuous Drain Current (ID) 22.4A
Gate to Source Voltage (Vgs) 30V
Max Dual Supply Voltage 650V
Pulsed Drain Current-Max (IDM) 72A