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IPP052N08N5AKSA1
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH TO220-3
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Buying Options
Total Price: USD $19.16
Unit Price: USD $19.16435
≥1 USD $19.16435
≥10 USD $15.7244
≥100 USD $15.23325
≥500 USD $14.7421
≥1000 USD $14.25
Inventory: 6991
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 13 Weeks
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Series OptiMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 125W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 17 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.2m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 3.8V @ 66μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 3770pF @ 40V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V
Rise Time 7 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 27 ns
Continuous Drain Current (ID) 80A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 80V
Drain-source On Resistance-Max 0.0052Ohm
Pulsed Drain Current-Max (IDM) 320A
Avalanche Energy Rating (Eas) 84 mJ
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Weight 6.000006g
Transistor Element Material SILICON
Compliance
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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