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STB6NK60Z-1
RoHS 
RoHS compliant
RoHS compliantPackage TO-262-3 Long Leads, I2Pak, TO-262AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 6A I2PAK
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Buying Options
Total Price: USD $0.69
Unit Price: USD $0.68685
≥1 USD $0.68685
≥10 USD $0.56335
≥100 USD $0.54625
≥500 USD $0.5282
≥1000 USD $0.5111
Inventory: 8423
Minimum: 1
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Technical Details
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series SuperMESH?
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 1.2Ohm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STB6N
Pin Count 3
Number of Elements 1
Power Dissipation-Max 110W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 110W
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.2 Ω @ 3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 905pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V
Rise Time 14ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 47 ns
Continuous Drain Current (ID) 6A
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 6A
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 24A
Avalanche Energy Rating (Eas) 210 mJ
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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