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IRFH5300TRPBF
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerVDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 40A PQFN
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Buying Options
Total Price: USD $0.86
Unit Price: USD $0.86329
≥1 USD $0.86329
≥10 USD $0.814418
≥100 USD $0.768323
≥500 USD $0.724839
≥1000 USD $0.683805
Inventory: 4000
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
Dimensions
Height 850μm
Length 6mm
Width 5mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 1.4MOhm
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
JESD-30 Code R-PDSO-N5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.6W Ta 250W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.6W
Case Connection DRAIN
Turn On Delay Time 26 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.4m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2.35V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 7200pF @ 15V
Current - Continuous Drain (Id) @ 25°C 40A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Rise Time 30 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 31 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 40A
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 420 mJ
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Rochester Electronics, LLC