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FDS6064N7
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
N-CHANNEL POWER MOSFET
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Buying Options
Total Price: USD $14.5
Unit Price: USD $14.50175
≥1 USD $14.50175
≥10 USD $11.89875
≥100 USD $11.5273
≥500 USD $11.1549
≥1000 USD $10.78345
Inventory: 9459
Minimum: 1
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Technical Details
Physical
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench?
JESD-609 Code e4
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Terminal Finish NICKEL PALLADIUM GOLD
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-G8
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5m Ω @ 23A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7.191pF @ 10V
Current - Continuous Drain (Id) @ 25°C 23A Ta
Gate Charge (Qg) (Max) @ Vgs 98nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Drain Current-Max (Abs) (ID) 23A
Drain-source On Resistance-Max 0.0035Ohm
Pulsed Drain Current-Max (IDM) 60A
DS Breakdown Voltage-Min 20V
Compliance
RoHS Status ROHS3 Compliant
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