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SUM110N05-06L-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET 55V 100A 158W
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Buying Options
Total Price: USD $8.87
Unit Price: USD $8.87205
≥1 USD $8.87205
≥10 USD $7.27985
≥100 USD $7.0528
≥500 USD $6.8248
≥1000 USD $6.59775
Inventory: 4275
Minimum: 1
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Technical Details

Physical

Mount Surface Mount, Through Hole
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3

Technical

Packaging Digi-Reel?
Published 2009
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Resistance 6mOhm
Terminal Finish Matte Tin (Sn)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Subcategory FET General Purpose Powers
Max Power Dissipation 36W
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.7W
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 110A Tc
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Rise Time 15ns
Fall Time (Typ) 15 ns
Turn-Off Delay Time 35 ns
Reverse Recovery Time 70 ns
Continuous Drain Current (ID) 110A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Pulsed Drain Current-Max (IDM) 240A
Dual Supply Voltage 55V
Nominal Vgs 3 V

Dimensions

Height 4.826mm
Length 10.414mm
Width 9.652mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

SF20BG-T

Diodes Incorporated

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