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BUZ73A H3046
RoHS
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Package TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 5.5A TO220-3
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Buying Options
Total Price: USD $0.54
Unit Price: USD $0.543357
≥1 USD $0.543357
≥10 USD $0.512603
≥100 USD $0.483592
≥500 USD $0.456216
≥1000 USD $0.430392
Inventory: 3887
Minimum: 1
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Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
Series SIPMOS?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Reach Compliance Code compliant
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 40W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 600m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 530pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.5A Tc
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 5.5A
Drain-source On Resistance-Max 0.6Ohm
Pulsed Drain Current-Max (IDM) 22A
DS Breakdown Voltage-Min 200V
Avalanche Energy Rating (Eas) 120 mJ
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MUN2231T1
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