Welcome to flywing-tech.com ｜ info@flywing-tech.com
- English
Account & Orders
New Account? Start here
IRF7821GTRPBF
RoHS
/
Package 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 13.6A 8-SOIC
PDF
/
Buying Options
Total Price: USD $0.25
Unit Price: USD $0.245864
≥1 USD $0.245864
≥10 USD $0.231951
≥100 USD $0.21882
≥500 USD $0.206438
≥1000 USD $0.194751
Inventory: 8829
Minimum: 1
-
+
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Dimensions
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Technical
Operating Temperature -55°C~155°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 155°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Power Dissipation 2.5W
Turn On Delay Time 6.3 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9.1mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1010pF @ 15V
Current - Continuous Drain (Id) @ 25°C 13.6A Ta
Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V
Rise Time 2.7ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 7.3 ns
Turn-Off Delay Time 9.7 ns
Continuous Drain Current (ID) 13.6A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 1.01nF
Drain to Source Resistance 9.1mOhm
Rds On Max 9.1 mΩ
Nominal Vgs 1 V
Alternative Model
BUK9MLL-55PLL,518
Nexperia USA Inc.Recommended For You
PDA9R9G01222
Powerex Inc.