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IRFH5304TR2PBF
RoHS
/
Package 8-PowerVDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 22A 8VQFN
PDF
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Buying Options
Total Price: USD $0.27
Unit Price: USD $0.266728
≥1 USD $0.266728
≥10 USD $0.251628
≥100 USD $0.237382
≥500 USD $0.223946
≥1000 USD $0.211267
Inventory: 5986
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Supplier Device Package 8-PQFN (5x6)
Technical
Packaging Cut Tape (CT)
Published 2010
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 3.6W
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 46W
Turn On Delay Time 13 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.5mOhm @ 47A, 10V
Vgs(th) (Max) @ Id 2.35V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 2360pF @ 10V
Current - Continuous Drain (Id) @ 25°C 22A Ta 79A Tc
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Rise Time 25ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 6.6 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 79A
Threshold Voltage 2.35V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 1.65nF
Recovery Time 29 ns
Drain to Source Resistance 4.5mOhm
Rds On Max 4 mΩ
Nominal Vgs 2.35 V
Dimensions
Height 810μm
Length 5mm
Width 5.0038mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
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