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NTD70N03RG
RoHS
/
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Tube Surface Mount N-Channel Single Mosfet Transistor 10A Ta 32A Tc 32A 1.87W 1.3ns
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Buying Options
Total Price: USD $1.52
Unit Price: USD $1.51525
≥1 USD $1.51525
≥10 USD $1.24355
≥100 USD $1.2046
≥500 USD $1.16565
≥1000 USD $1.1267
Inventory: 9718
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 25V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 72A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1.36W Ta 62.5W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.87W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1333pF @ 20V
Current - Continuous Drain (Id) @ 25°C 10A Ta 32A Tc
Gate Charge (Qg) (Max) @ Vgs 13.2nC @ 5V
Rise Time 1.3ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 1.3 ns
Turn-Off Delay Time 18.4 ns
Continuous Drain Current (ID) 32A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 62.8A
Drain-source On Resistance-Max 0.013Ohm
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 140A
Avalanche Energy Rating (Eas) 71.7 mJ
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
No data
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