Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Power Dissipation-Max 1.04W Ta 75W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 24V
Current - Continuous Drain (Id) @ 25°C 8.4A Ta 68A Tc
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 68A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 28A
Avalanche Energy Rating (Eas) 722 mJ