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BSS138LT3

ON Semiconductor
RoHS
/
Package TO-236-3, SC-59, SOT-23-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 50V 200MA SOT-23
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Buying Options
Total Price: USD $0.06
Unit Price: USD $0.062526
≥1 USD $0.062526
≥500 USD $0.04597
≥1000 USD $0.038311
≥2000 USD $0.035154
≥5000 USD $0.032848
≥10000 USD $0.030563
≥15000 USD $0.029556
≥50000 USD $0.029065
Inventory: 932
Minimum: 1
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Technical Details

Physical

Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn80Pb20)
HTS Code 8541.21.00.95
Subcategory FET General Purpose Power
Voltage - Rated DC 50V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 200mA
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 225mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 225mW
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5 Ω @ 200mA, 5V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C 200mA Ta
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±20V
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 200mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.2A
Drain to Source Breakdown Voltage 50V
Feedback Cap-Max (Crss) 5 pF

Compliance

RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

Alternative Model

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