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IRF6641TR1PBF
RoHS
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Package DirectFET? Isometric MZ
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 4.6A DIRECTFET
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Buying Options
Total Price: USD $0.59
Unit Price: USD $0.5909
≥1 USD $0.5909
≥10 USD $0.48545
≥100 USD $0.47025
≥500 USD $0.45505
≥1000 USD $0.43985
Inventory: 4700
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric MZ
Number of Pins 5
Supplier Device Package DIRECTFET? MZ
Technical
Operating Temperature -40°C~150°C TJ
Packaging Cut Tape (CT)
Published 2007
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Current Rating 4.6A
Number of Elements 1
Power Dissipation-Max 2.8W Ta 89W Tc
Element Configuration Single
Power Dissipation 89W
Turn On Delay Time 16 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 59.9mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4.9V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 2290pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.6A Ta 26A Tc
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Rise Time 11ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 6.5 ns
Turn-Off Delay Time 31 ns
Continuous Drain Current (ID) 3.7A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Dual Supply Voltage 200V
Input Capacitance 2.29nF
Recovery Time 130 ns
Drain to Source Resistance 59.9mOhm
Rds On Max 59.9 mΩ
Nominal Vgs 4 V
Dimensions
Height 506μm
Length 6.35mm
Width 5.05mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
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