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IRF3706STRLPBF

Infineon Technologies
RoHS
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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description HEXFET? Tape & Reel (TR) Surface Mount N-Channel Mosfet Transistor 77A Tc 77A 88W 4.8ns
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Buying Options
Total Price: USD $0.31
Unit Price: USD $0.307555
≥1 USD $0.307555
≥10 USD $0.290148
≥100 USD $0.273725
≥500 USD $0.25823
≥1000 USD $0.243612
Inventory: 5930
Minimum: 1
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 88W Tc
Element Configuration Single
Power Dissipation 88W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2410pF @ 10V
Current - Continuous Drain (Id) @ 25°C 77A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 4.5V
Rise Time 87ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.8V 10V
Vgs (Max) ±12V
Fall Time (Typ) 4.8 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 77A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Input Capacitance 2.41nF
Drain to Source Resistance 10.5mOhm
Rds On Max 8.5 mΩ

Compliance

RoHS Status RoHS Compliant

Alternative Model

No data

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