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IRF3805LPBF
RoHS
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Package TO-262-3 Long Leads, I2Pak, TO-262AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 55V 75A TO-262
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Buying Options
Total Price: USD $0.58
Unit Price: USD $0.57817
≥1 USD $0.57817
≥10 USD $0.545439
≥100 USD $0.514571
≥500 USD $0.485447
≥1000 USD $0.457965
Inventory: 3417
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Supplier Device Package TO-262
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 300W Tc
Power Dissipation 130W
Turn On Delay Time 150 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.3mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7960pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 290nC @ 10V
Rise Time 20ns
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 87 ns
Turn-Off Delay Time 93 ns
Continuous Drain Current (ID) 75A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Input Capacitance 7.96nF
Drain to Source Resistance 3.3mOhm
Rds On Max 3.3 mΩ
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Dimensions
Height 9.65mm
Length 10.668mm
Width 4.826mm
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