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IRFS4010-7PPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 190A D2PAK-7
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Buying Options
Total Price: USD $3.87
Unit Price: USD $3.87125
≥1 USD $3.87125
≥10 USD $3.1768
≥100 USD $3.07705
≥500 USD $2.97825
≥1000 USD $2.8785
Inventory: 999
Minimum: 1
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Number of Pins 7
Transistor Element Material SILICON

Dimensions

Height 4.55mm
Length 10.67mm
Width 9.65mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2005
Series HEXFET?
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G6
Number of Elements 1
Power Dissipation-Max 380W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 380W
Case Connection DRAIN
Turn On Delay Time 19 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4m Ω @ 110A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9830pF @ 50V
Current - Continuous Drain (Id) @ 25°C 190A Tc
Gate Charge (Qg) (Max) @ Vgs 230nC @ 10V
Rise Time 56 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 48 ns
Turn-Off Delay Time 100 ns
Reverse Recovery Time 60 ns
Continuous Drain Current (ID) 190A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.004Ohm
Drain to Source Breakdown Voltage 100V
Dual Supply Voltage 100V
Avalanche Energy Rating (Eas) 330 mJ
Nominal Vgs 4 V

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