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CSD25302Q2
RoHS 
RoHS compliant
RoHS compliantPackage 6-SMD, Flat Leads
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET PCh NexFET Pwr MOSFET
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Buying Options
Total Price: USD $0.69
Unit Price: USD $0.6916
≥1 USD $0.6916
≥10 USD $0.5681
≥100 USD $0.55005
≥500 USD $0.532
≥1000 USD $0.5149
Inventory: 2645
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-SMD, Flat Leads
Number of Pins 6
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e3
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Base Part Number CSD25302
Pin Count 6
Number of Elements 1
Power Dissipation-Max 2.4W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.4W
Case Connection SOURCE
Turn On Delay Time 3.2 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 49m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 10V
Current - Continuous Drain (Id) @ 25°C 5A Tc
Gate Charge (Qg) (Max) @ Vgs 3.4nC @ 4.5V
Rise Time 13.2ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 1.3 ns
Turn-Off Delay Time 8.6 ns
Continuous Drain Current (ID) 5A
Threshold Voltage -650mV
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 5A
Drain-source On Resistance-Max 0.092Ohm
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 20A
Nominal Vgs -650 mV
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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