Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1.4W Ta
Element Configuration Single
Rds On (Max) @ Id, Vgs 120m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 435pF @ 10V
Current - Continuous Drain (Id) @ 25°C 3A Ta
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) -3A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
FET Feature Schottky Diode (Isolated)