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IRFB3004GPBF
RoHS
/
Package TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 40V 195A TO220AB
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Buying Options
Total Price: USD $11.06
Unit Price: USD $11.058
≥1 USD $11.058
≥10 USD $9.07345
≥100 USD $8.79035
≥500 USD $8.5063
≥1000 USD $8.2232
Inventory: 3217
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Dimensions
Height 16.51mm
Length 10.668mm
Width 4.826mm
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2009
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 380W Tc
Element Configuration Single
Power Dissipation 380W
Turn On Delay Time 23 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.75mOhm @ 195A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 195A Tc
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Rise Time 220ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 130 ns
Turn-Off Delay Time 90 ns
Continuous Drain Current (ID) 195A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Input Capacitance 9.2nF
Drain to Source Resistance 1.75mOhm
Rds On Max 1.75 mΩ
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