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IRFH3702TR2PBF
RoHS
/
Package 8-PowerVDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 16A 8PQFN
PDF
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Buying Options
Total Price: USD $0.42
Unit Price: USD $0.41515
≥1 USD $0.41515
≥10 USD $0.34105
≥100 USD $0.32965
≥500 USD $0.3192
≥1000 USD $0.30875
Inventory: 4730
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Supplier Device Package 8-PQFN (3x3)
Dimensions
Height 939.8μm
Length 2.9972mm
Width 2.9972mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Technical
Packaging Cut Tape (CT)
Published 2010
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 7.1MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 2.8W
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 2.8W
Turn On Delay Time 9.6 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7.1mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1510pF @ 15V
Current - Continuous Drain (Id) @ 25°C 16A Ta 42A Tc
Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V
Rise Time 15ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 5.8 ns
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 16A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 1.51nF
Recovery Time 26 ns
Drain to Source Resistance 7.1mOhm
Rds On Max 7.1 mΩ
Nominal Vgs 1.8 V
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