Operating Temperature -55°C~175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Power Dissipation-Max 1.33W Ta 60W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.7m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2241pF @ 12V
Current - Continuous Drain (Id) @ 25°C 13.3A Ta 89A Tc
Gate Charge (Qg) (Max) @ Vgs 27nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Turn-Off Delay Time 27.2 ns
Continuous Drain Current (ID) 16.3A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 13.3A
Drain-source On Resistance-Max 0.0068Ohm
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 179A
Avalanche Energy Rating (Eas) 180.5 mJ