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NTD4813NH-35G
RoHS
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Package TO-251-3 Stub Leads, IPak
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Tube Through Hole N-Channel Single Mosfet Transistor 7.6A Ta 40A Tc 40A 1.94W 16.1ns
PDF
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Buying Options
Total Price: USD $1.54
Unit Price: USD $1.53995
≥1 USD $1.53995
≥10 USD $1.2635
≥100 USD $1.2236
≥500 USD $1.18465
≥1000 USD $1.14475
Inventory: 7930
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Stub Leads, IPak
Number of Pins 3
Transistor Element Material SILICON
Compliance
RoHS Status RoHS Compliant
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1.27W Ta 35.3W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.94W
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 13m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 940pF @ 12V
Current - Continuous Drain (Id) @ 25°C 7.6A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
Rise Time 16.1ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Vgs (Max) ±20V
Fall Time (Typ) 16.1 ns
Turn-Off Delay Time 17.2 ns
Continuous Drain Current (ID) 40A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0259Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 90A
Avalanche Energy Rating (Eas) 44.4 mJ
Alternative Model
No data
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