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NTD4855N-35G
RoHS
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Package TO-251-3 Stub Leads, IPak
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Tube Through Hole N-Channel Single Mosfet Transistor 14A Ta 98A Tc 17.7A 2.24W 4.35ns
PDF
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Buying Options
Total Price: USD $5.72
Unit Price: USD $5.71995
≥1 USD $5.71995
≥10 USD $4.69395
≥100 USD $4.5467
≥500 USD $4.4004
≥1000 USD $4.2541
Inventory: 8957
Minimum: 1
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Technical Details
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 weeks ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Stub Leads, IPak
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1.35W Ta 66.7W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.24W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.3m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2950pF @ 12V
Current - Continuous Drain (Id) @ 25°C 14A Ta 98A Tc
Gate Charge (Qg) (Max) @ Vgs 32.7nC @ 4.5V
Rise Time 16.52ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.35 ns
Turn-Off Delay Time 32.02 ns
Continuous Drain Current (ID) 17.7A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 14A
Drain-source On Resistance-Max 0.006Ohm
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 197A
Avalanche Energy Rating (Eas) 220 mJ
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
No data
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