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NTD4810NHT4G
RoHS
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Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Tape & Reel (TR) Surface Mount N-Channel SINGLE WITH BUILT-IN DIODE Mosfet Transistor 9A Ta 54A Tc 54A 1.28W Ta 50W Tc 30V
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Buying Options
Total Price: USD $2.76
Unit Price: USD $2.7645
≥1 USD $2.7645
≥10 USD $2.2686
≥100 USD $2.1983
≥500 USD $2.12705
≥1000 USD $2.0558
Inventory: 3210
Minimum: 1
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Technical Details
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 4
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 265
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
JESD-30 Code R-PSFM-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.28W Ta 50W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 10m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1225pF @ 12V
Current - Continuous Drain (Id) @ 25°C 9A Ta 54A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Vgs (Max) ±20V
Continuous Drain Current (ID) 54A
Drain Current-Max (Abs) (ID) 10.8A
Drain-source On Resistance-Max 0.0167Ohm
Pulsed Drain Current-Max (IDM) 120A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 66 mJ
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
No data
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