Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) Not Applicable
Terminal Finish Nickel (Ni)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 600W Tc
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 17m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 9100pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 360nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) 120A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 480A