Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.68W Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 5.46 ns
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 16m Ω @ 11.6A, 10V
Vgs(th) (Max) @ Id 1.95V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 867pF @ 15V
Current - Continuous Drain (Id) @ 25°C 9.7A Ta
Gate Charge (Qg) (Max) @ Vgs 18.85nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Turn-Off Delay Time 18.84 ns
Continuous Drain Current (ID) 9.7A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 48A