Operating Temperature -55°C~175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 3.8W Ta 110W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 22m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 47A Tc
Gate Charge (Qg) (Max) @ Vgs 48nC @ 5V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 47A
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 55V
Max Junction Temperature (Tj) 175°C