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IPB60R160C6ATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description Single N-Channel 600 V 160 mOhm 75 nC CoolMOS? Power Mosfet - D2PAK
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Buying Options
Total Price: USD $8.06
Unit Price: USD $8.05505
≥1 USD $8.05505
≥10 USD $6.60915
≥100 USD $6.403
≥500 USD $6.1959
≥1000 USD $5.98975
Inventory: 9809
Minimum: 1
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 2
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series CoolMOS?
JESD-609 Code e3
Pbfree Code no
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 176W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 176W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 160m Ω @ 11.3A, 10V
Vgs(th) (Max) @ Id 3.5V @ 750μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1660pF @ 100V
Current - Continuous Drain (Id) @ 25°C 23.8A Tc
Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 96 ns
Continuous Drain Current (ID) 23.8A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Pulsed Drain Current-Max (IDM) 70A
Avalanche Energy Rating (Eas) 497 mJ

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead

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