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FDZ202P

Rochester Electronics, LLC
RoHS
/
Package 12-WFBGA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description P-CHANNEL POWER MOSFET
PDF
/
Buying Options
Total Price: USD $4.72
Unit Price: USD $4.715015
≥1 USD $4.715015
≥10 USD $4.448129
≥100 USD $4.196351
≥500 USD $3.958818
≥1000 USD $3.73474
Inventory: 7020
Minimum: 1
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Technical Details

Physical

Mounting Type Surface Mount
Package / Case 12-WFBGA
Surface Mount YES
Transistor Element Material SILICON

Compliance

RoHS Status Non-RoHS Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench?
JESD-609 Code e2
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 12
Terminal Finish TIN SILVER
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 12
JESD-30 Code R-PBGA-B12
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2W Ta
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 45m Ω @ 5.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 884pF @ 10V
Current - Continuous Drain (Id) @ 25°C 5.5A Ta
Gate Charge (Qg) (Max) @ Vgs 13nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Drain Current-Max (Abs) (ID) 5.5A
Drain-source On Resistance-Max 0.045Ohm
Pulsed Drain Current-Max (IDM) 20A
DS Breakdown Voltage-Min 20V

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