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NTMS4801NR2G
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET NFET SO8 30V 9.9A 12.5mOhm
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Buying Options
Total Price: USD $3.56
Unit Price: USD $3.5625
≥1 USD $3.5625
≥10 USD $2.92315
≥100 USD $2.83195
≥500 USD $2.7398
≥1000 USD $2.6486
Inventory: 1598
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 31 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Physical
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 8
Number of Elements 1
Power Dissipation-Max 800mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.1W
Turn On Delay Time 10.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2201pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7.5A Ta
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Rise Time 3.7 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 9.8 ns
Turn-Off Delay Time 29 ns
Continuous Drain Current (ID) 9.9A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 7.5A
Drain-source On Resistance-Max 0.009Ohm
Drain to Source Breakdown Voltage 30V
Nominal Vgs 2.5 V
Feedback Cap-Max (Crss) 225 pF
Dimensions
Height 1.5mm
Length 5mm
Width 4mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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