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IPA90R1K0C3XKSA1
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3 Full Pack
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 900V 5.7A TO220-3
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Buying Options
Total Price: USD $6.54
Unit Price: USD $6.544583
≥1 USD $6.544583
≥10 USD $6.174132
≥100 USD $5.824655
≥500 USD $5.494959
≥1000 USD $5.183918
Inventory: 6547
Minimum: 1
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Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 32W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 32W
Case Connection ISOLATED
Turn On Delay Time 70 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1 Ω @ 3.3A, 10V
Vgs(th) (Max) @ Id 3.5V @ 370μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 850pF @ 100V
Current - Continuous Drain (Id) @ 25°C 5.7A Tc
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Rise Time 20 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 400 ns
Continuous Drain Current (ID) 5.7A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 1Ohm
Drain to Source Breakdown Voltage 900V
Pulsed Drain Current-Max (IDM) 12A
Dual Supply Voltage 900V
Avalanche Energy Rating (Eas) 97 mJ
Nominal Vgs 3 V
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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