Operating Temperature -55°C~175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish MATTE TIN
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT APPLICABLE
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE
Qualification Status COMMERCIAL
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 135W Tc
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10.5m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1.84pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Ta 75A Tc
Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Drain Current-Max (Abs) (ID) 12A
Drain-source On Resistance-Max 0.0105Ohm
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 429 mJ