Welcome to flywing-tech.com ｜ info@flywing-tech.com
- English
Account & Orders
New Account? Start here
FQPF19N10L
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3 Full Pack
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
N-CHANNEL POWER MOSFET
PDF
/
Buying Options
Total Price: USD $25.12
Unit Price: USD $25.121179
≥1 USD $25.121179
≥10 USD $23.699218
≥100 USD $22.357757
≥500 USD $21.092228
≥1000 USD $19.898321
Inventory: 1448
Minimum: 1
-
+
Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface Mount NO
Transistor Element Material SILICON
Compliance
RoHS Status ROHS3 Compliant
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series QFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT APPLICABLE
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 38W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 6.8A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 870pF @ 25V
Current - Continuous Drain (Id) @ 25°C 13.6A Tc
Gate Charge (Qg) (Max) @ Vgs 18nC @ 5V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 13.6A
Drain-source On Resistance-Max 0.11Ohm
Pulsed Drain Current-Max (IDM) 54.4A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 220 mJ
Alternative Model
SIA477EDJ-T1-GE3
Vishay SiliconixRecommended For You
RN1118MFV,L3F
Toshiba Semiconductor and Storage