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STH270N8F7-2
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab) Variant
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 80V 180A H2PAK-2
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Buying Options
Total Price: USD $1.94
Unit Price: USD $1.9361
≥1 USD $1.9361
≥10 USD $1.5884
≥100 USD $1.539
≥500 USD $1.4896
≥1000 USD $1.43925
Inventory: 2940
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 15 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab) Variant
Number of Pins 3
Transistor Element Material SILICON
Dimensions
Height 4.8mm
Length 10.4mm
Width 15.8mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~175°C TJ
Packaging Cut Tape (CT)
Series DeepGATE?, STripFET? VII
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Base Part Number STH270
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 315W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 315W
Case Connection DRAIN
Turn On Delay Time 56 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.1m Ω @ 90A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 13600pF @ 50V
Current - Continuous Drain (Id) @ 25°C 180A Tc
Gate Charge (Qg) (Max) @ Vgs 193nC @ 10V
Rise Time 180 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 42 ns
Turn-Off Delay Time 98 ns
Continuous Drain Current (ID) 180A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0021Ohm
Drain to Source Breakdown Voltage 80V
Pulsed Drain Current-Max (IDM) 720A
Avalanche Energy Rating (Eas) 1160 mJ
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