Operating Temperature 150°C TJ
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 50W Tc
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 520m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11A Ta 5.4A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) 5.4A
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 11A
Drain-source On Resistance-Max 0.52Ohm
Pulsed Drain Current-Max (IDM) 44A
DS Breakdown Voltage-Min 500V
Avalanche Energy Rating (Eas) 8.1 mJ