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FQB19N20LTM
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 200V 21A 3-Pin(2+Tab) D2PAK T/R
PDF
Buying Options
Total Price: USD $1.61
Unit Price: USD $1.6112
≥1 USD $1.6112
≥10 USD $1.3224
≥100 USD $1.2806
≥500 USD $1.23975
≥1000 USD $1.19795
Inventory: 2116
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 7 Weeks
Lifecycle Status ACTIVE (Last Updated: 16 hours ago)
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Dimensions
Height 4.83mm
Length 10.67mm
Width 9.65mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2000
Series QFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 140MOhm
Subcategory FET General Purpose Power
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating 21A
JESD-30 Code R-PSSO-G2
Number of Elements 1
Voltage 200V
Power Dissipation-Max 3.13W Ta 140W Tc
Element Configuration Single
Current 17A
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.13W
Case Connection DRAIN
Turn On Delay Time 35 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 140m Ω @ 10.5A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 21A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 5V
Rise Time 300 ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 180 ns
Turn-Off Delay Time 130 ns
Continuous Drain Current (ID) 21mA
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Avalanche Energy Rating (Eas) 250 mJ
Nominal Vgs 2 V
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