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IRFR220TRRPBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 4.8A DPAK
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Buying Options
Total Price: USD $5.06
Unit Price: USD $5.057631
≥1 USD $5.057631
≥10 USD $4.771351
≥100 USD $4.501278
≥500 USD $4.246485
≥1000 USD $4.00612
Inventory: 7638
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.5W Ta 42W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 7.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 800m Ω @ 2.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.8A Tc
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Rise Time 22 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 4.8A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.8Ohm
Drain to Source Breakdown Voltage 200V
Dimensions
Height 2.39mm
Length 6.73mm
Width 6.22mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
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