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SI4686DY-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 18.2A 8-SOIC
Buying Options
Total Price: USD $0.84
Unit Price: USD $0.8436
≥1 USD $0.8436
≥10 USD $0.69255
≥100 USD $0.6707
≥500 USD $0.64885
≥1000 USD $0.62795
Inventory: 6525
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 186.993455mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series TrenchFET?, WFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3W Ta 5.2W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3W
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.5m Ω @ 13.8A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1220pF @ 15V
Current - Continuous Drain (Id) @ 25°C 18.2A Tc
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Rise Time 20 ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 18.2A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0095Ohm
DS Breakdown Voltage-Min 30V
Nominal Vgs 3 V

Dimensions

Height 1.55mm
Length 5mm
Width 4mm

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

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