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BSC027N06LS5ATMA1
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 100A 8TDSON
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Buying Options
Total Price: USD $6.08
Unit Price: USD $6.08285
≥1 USD $6.08285
≥10 USD $4.9913
≥100 USD $4.8355
≥500 USD $4.6797
≥1000 USD $4.5239
Inventory: 3445
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 26 Weeks
Compliance
RoHS Status ROHS3 Compliant
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series OptiMOS?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 83W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.7m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2.3V @ 49μA
Input Capacitance (Ciss) (Max) @ Vds 4400pF @ 30V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 4.5V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 23A
Drain-source On Resistance-Max 0.0027Ohm
Pulsed Drain Current-Max (IDM) 400A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 100 mJ
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