Welcome to flywing-tech.com ｜ info@flywing-tech.com
- English
Account & Orders
New Account? Start here
IRLML6402TR
RoHS
/
Package TO-236-3, SC-59, SOT-23-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 20V 3.7A SOT-23
PDF
/
Buying Options
Total Price: USD $0.09
Unit Price: USD $0.0874
≥1 USD $0.0874
≥10 USD $0.0722
≥100 USD $0.06935
≥500 USD $0.06745
≥1000 USD $0.06555
Inventory: 2248
Minimum: 1
-
+
Technical Details
Physical
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Technical
Packaging Cut Tape (CT)
Published 2003
Series HEXFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 65m Ω @ 3.7A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 633pF @ 10V
Current - Continuous Drain (Id) @ 25°C 3.7A Ta
Gate Charge (Qg) (Max) @ Vgs 12nC @ 5V
Drain to Source Voltage (Vdss) 20V
JEDEC-95 Code TO-236AB
Drain Current-Max (Abs) (ID) 3.7A
Drain-source On Resistance-Max 0.065Ohm
Pulsed Drain Current-Max (IDM) 22A
DS Breakdown Voltage-Min 20V
Avalanche Energy Rating (Eas) 11 mJ
Power Dissipation-Max (Abs) 1.3W
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
FJX4007RTF
ON SemiconductorRecommended For You
DTA144VCAT116
ROHM Semiconductor