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IRLML5103TR

Infineon Technologies
RoHS
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Package TO-236-3, SC-59, SOT-23-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 30V 760MA SOT-23
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Buying Options
Total Price: USD $0.08
Unit Price: USD $0.0836
≥1 USD $0.0836
≥500 USD $0.0684
≥1000 USD $0.0665
≥2000 USD $0.0646
≥5000 USD $0.06175
≥10000 USD $0.05605
Inventory: 5454
Minimum: 1
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Technical Details

Physical

Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON

Technical

Packaging Cut Tape (CT)
Published 2003
Series HEXFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
HTS Code 8541.21.00.95
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Operating Temperature (Min) -55°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 600m Ω @ 600mA, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 75pF @ 25V
Current - Continuous Drain (Id) @ 25°C 760mA Ta
Gate Charge (Qg) (Max) @ Vgs 5.1nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drain Current-Max (Abs) (ID) 0.76A
Drain-source On Resistance-Max 0.6Ohm
DS Breakdown Voltage-Min 30V
Power Dissipation-Max (Abs) 0.28W

Compliance

RoHS Status Non-RoHS Compliant

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