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IRLL110
RoHS
/
Package TO-261-4, TO-261AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223
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Buying Options
Total Price: USD $0.35
Unit Price: USD $0.3496
≥1 USD $0.3496
≥10 USD $0.2869
≥100 USD $0.2774
≥500 USD $0.26885
≥1000 USD $0.2603
Inventory: 7308
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Supplier Device Package SOT-223
Weight 250.212891mg
Compliance
RoHS Status Non-RoHS Compliant
Dimensions
Height 1.45mm
Length 6.7mm
Width 3.7mm
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2017
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 540mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2W Ta 3.1W Tc
Power Dissipation 2W
Turn On Delay Time 9.3 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 540mOhm @ 900mA, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.5A Tc
Gate Charge (Qg) (Max) @ Vgs 6.1nC @ 5V
Rise Time 47ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4V 5V
Vgs (Max) ±10V
Fall Time (Typ) 18 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 1.5A
Gate to Source Voltage (Vgs) 10V
Input Capacitance 250pF
Drain to Source Resistance 540mOhm
Rds On Max 540 mΩ
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