Welcome to flywing-tech.com ｜ info@flywing-tech.com
- English
Account & Orders
New Account? Start here
IRFR9110TRL
RoHS
/
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 100V 3.1A DPAK
PDF
/
Buying Options
Total Price: USD $8.59
Unit Price: USD $8.5918
≥1 USD $8.5918
≥10 USD $7.04995
≥100 USD $6.82955
≥500 USD $6.60915
≥1000 USD $6.38875
Inventory: 6510
Minimum: 1
-
+
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package D-Pak
Weight 1.437803g
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC -100V
Technology MOSFET (Metal Oxide)
Current Rating -3.1A
Number of Channels 1
Power Dissipation-Max 2.5W Ta 25W Tc
Element Configuration Single
Turn On Delay Time 10 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 1.2Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.1A Tc
Gate Charge (Qg) (Max) @ Vgs 8.7nC @ 10V
Rise Time 27ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 17 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 3.1A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -100V
Input Capacitance 200pF
Drain to Source Resistance 1.2Ohm
Rds On Max 1.2 Ω
Dimensions
Height 2.39mm
Length 6.73mm
Width 6.22mm
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Alternative Model
SUM110N04-03-E3
Vishay SiliconixRecommended For You
PDTB123YQAZ
Nexperia USA Inc.