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2SK2887TL
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 3A DPAK
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Buying Options
Total Price: USD $16.51
Unit Price: USD $16.5053
≥1 USD $16.5053
≥10 USD $13.5432
≥100 USD $13.1195
≥500 USD $12.69675
≥1000 USD $12.27305
Inventory: 9619
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 1998
JESD-609 Code e2
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Copper (Sn98Cu2)
Subcategory FET General Purpose Power
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Current Rating 3A
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 20W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 20W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 900m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 230pF @ 10V
Current - Continuous Drain (Id) @ 25°C 3A Ta
Gate Charge (Qg) (Max) @ Vgs 8.5nC @ 10V
Rise Time 12ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 34 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 3A
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 3A
Drain-source On Resistance-Max 0.9Ohm
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 12A
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