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IRF6678TR1
RoHS
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Package DirectFET? Isometric MX
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 30A DIRECTFET
PDF
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Buying Options
Total Price: USD $2.63
Unit Price: USD $2.62675
≥1 USD $2.62675
≥10 USD $2.15555
≥100 USD $2.0881
≥500 USD $2.02065
≥1000 USD $1.9532
Inventory: 4584
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric MX
Number of Pins 7
Supplier Device Package DIRECTFET? MX
Compliance
REACH SVHC No SVHC
RoHS Status Non-RoHS Compliant
Lead Free Lead Free
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Termination SMD/SMT
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Current Rating 30A
Power Dissipation-Max 2.8W Ta 89W Tc
Power Dissipation 2.8W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5640pF @ 15V
Current - Continuous Drain (Id) @ 25°C 30A Ta 150A Tc
Gate Charge (Qg) (Max) @ Vgs 65nC @ 4.5V
Rise Time 71ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 8.1 ns
Turn-Off Delay Time 27 ns
Reverse Recovery Time 43 ns
Continuous Drain Current (ID) 30A
Threshold Voltage 2.25V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Input Capacitance 5.64nF
Drain to Source Resistance 1.7Ohm
Rds On Max 2.2 mΩ
Nominal Vgs 2.25 V
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