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NTD14N03RT4

ON Semiconductor
RoHS
/
Package DPAK
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 25V 2.5A DPAK
PDF
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Buying Options
Total Price: USD $0.2
Unit Price: USD $0.20045
≥1 USD $0.20045
≥10 USD $0.1653
≥100 USD $0.1596
≥500 USD $0.15485
≥1000 USD $0.14915
Inventory: 7559
Minimum: 1
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Technical Details

Physical

Mount Surface Mount
Package / Case DPAK

Compliance

RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

Technical

Packaging Cut Tape (CT)
Published 2007
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Voltage - Rated DC 25V
Max Power Dissipation 1.04W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 235
Reach Compliance Code not_compliant
Current Rating 14A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.56W
Case Connection DRAIN
Transistor Application SWITCHING
Rise Time 27ns
Drain to Source Voltage (Vdss) 25V
Polarity/Channel Type N-CHANNEL
Fall Time (Typ) 2 ns
Turn-Off Delay Time 9.6 ns
Continuous Drain Current (ID) 2.5A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 11.4A
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 28A
Input Capacitance 115pF
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Resistance 70.4mOhm
Rds On Max 95 mΩ

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