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SI4403BDY-T1-E3
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET P-CH 20V 7.3A 8-Pin SOIC N T/R
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Buying Options
Total Price: USD $1.34
Unit Price: USD $1.34235
≥1 USD $1.34235
≥10 USD $1.102
≥100 USD $1.0678
≥500 USD $1.03265
≥1000 USD $0.99845
Inventory: 9588
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 17mOhm
Terminal Finish MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Number of Elements 1
Power Dissipation-Max 1.35W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.35W
Turn On Delay Time 25 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 17m Ω @ 9.9A, 4.5V
Vgs(th) (Max) @ Id 1V @ 350μA
Current - Continuous Drain (Id) @ 25°C 7.3A Ta
Gate Charge (Qg) (Max) @ Vgs 50nC @ 5V
Rise Time 45ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 45 ns
Turn-Off Delay Time 150 ns
Continuous Drain Current (ID) 7.3A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 20V
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Dimensions
Height 1.55mm
Length 5mm
Width 4mm
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